By Amir M. Sodagar
The classical method of analog circuit research is a frightening prospect to many scholars, requiring tedious enumeration of contributing components and long calculations. such a lot textbooks practice this bulky method of small-signal amplifiers, which turns into much more tricky because the variety of elements raises. research of Bipolar and CMOS Amplifiers bargains scholars an alternate that allows fast and intuitive research and layout: the analysis-by-inspection method.
This useful and student-friendly textual content demonstrates tips on how to in attaining approximate effects that fall inside of a suitable variety of accuracy and are in accordance with sound medical ideas. operating from the fundamentals of amplifiers and transistors to biasing, unmarried- and multistage amplifiers, present assets and mirrors, and research at midband, low, and excessive frequencies, the writer demonstrates the interrelationship among habit in either the time and frequency domain names and balances the dialogue among bipolar and CMOS circuits. every one bankruptcy closes with a collection of simulation examples in SPICE and MATLAB® that provide scholars hands-on adventure using the strategies and techniques utilizing industry-standard tools.
Building a pragmatic operating wisdom round a high-quality theoretical framework, research of Bipolar and CMOS Amplifiers prepares your scholars to fulfill the demanding situations of fast and exact approximations and software-based research expecting them within the place of work
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Extra resources for Analysis of Bipolar and CMOS Amplifiers
The circuit is illustrated in Figure Ex. 5(b). Simulate the circuit, determine how much the signal is ampliﬁed by each stage, and ﬁnd the overall voltage gain. 1 0 11 20 0 FIGURE EX. 5(a) RS vS + − + vin Ampliﬁer I − (AV, Ri, Ro) + Ampliﬁer II + vout1 (AV, Ri, Ro) − vout1 − RL FIGURE EX. 5(b) Figure Ex. 5(c) depicts the signals at the input and output of both ampliﬁer stages. Peak-to-peak amplitude of the input source signal (vs) is 550 μV. The voltage at the input of the ﬁrst stage (vin) has a peak-to-peak amplitude of 497 μV, which is 90% of the input source signal, indicating the attenuation at the input.
For a long time now, the dominant class of MOS transistors is the enhancement MOS transistor, in which the channel is formed by applying certain voltages to the proper terminals of the transistor. Throughout this book, the enhancement MOS transistor is the default type of MOS transistor. Two types of MOS transistors are available, which are identical in general physical structure, basics of operation, and functionality, and different in some of the electrical aspects. 4 presents the circuit symbols for these two types of MOS transistors, known as negative-channel metal-oxide semiconductor (NMOS) and positive-channel metal-oxide semiconductor (PMOS) transistors, with the three terminals called the drain (D), the gate (G), and the source (S).
In room temperature, VT is approximately 25 mV. 13. This is sometimes referred to as the transistor’s input characteristic curve as it expresses the relationship between the signal applied to the input terminal (vBE) and the collector current. One of the major differences between a bipolar and an MOS transistor is the rate at which the transistor current (iC or iD) grows when the associated control voltage, (vBE or vGS) increases. 13, that the collector current of a bipolar transistor generally grows with vBE much more rapidly than the drain current of an MOS transistor does with vGS.