By Mircea Dragoman, Daniela Dragoman
This e-book is devoted to the hot two-dimensional one-atomic-layer-thick fabrics reminiscent of graphene, steel chalcogenides, silicene and different 2nd fabrics. The e-book describes their major actual houses and purposes in nanoelctronics, photonics, sensing and computing. a wide a part of the publication offers with graphene and its extraordinary actual homes. one other very important a part of the booklet bargains with semiconductor monolayers resembling MoS2 with notable purposes in photonics, and electronics. Silicene and germanene are the atom-thick opposite numbers of silicon and germanium with awesome purposes in electronics and photonics that are nonetheless unexplored. attention of two-dimensional electron fuel units finish the remedy. The physics of 2DEG is defined intimately and the purposes in THz and IR zone are discussed.
Both authors are operating at the moment on those 2nd fabrics constructing conception and applications.
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Additional info for 2D Nanoelectronics: Physics and Devices of Atomically Thin Materials
On the contrary, the external transistor contains the gate, drain and source resistances, denoted by RG , RD and RS , respectively. The equivalent circuit components of the intrinsic transistor, and fT and fmax are bias dependent. To obtain highest values for both fT and fmax , the FET must work in the saturation region, condition difﬁcult to achieve since graphene FETs do not have such a region. There are more elaborate models of graphene FETs, valid either for diffusive transport FETs (Thiele et al.
2013). Such self-aligned FETs with a gate length of 3 lm display good performances: mobility of 6100 cm2/V s, normalized contact resistance Rc W ¼ 412 X Á lm, gate leakage currents smaller than 1 nA, and a cutoff frequency of 13 GHz. The transconductance is about one order of magnitude higher than in normal top gate graphene FETs: 114 versus 14 lS. Better performances are obtained in FETs with sub-100 nm channel length, where the local gate is a highly doped GaN nanowire having an electrical permittivity of 10 (Liao et al.
1 eV), the work function of graphene can be determined as a function of the device fabrication conditions. 6 eV when the Fermi level EF is at the Dirac point. 4. 2 Nanoelectronics on 2D Carbon-Based Materials 45 Another bilayer graphene-Si (n- or p-type) diode conﬁguration contains the Si/SiO2/Si3N4/Cr/Au heterostructure depicted in Fig. 52 (Chen et al. 2011a). Although bilayer graphene is able to make Schottky contact with either n- or p-type Si, there are differences between these two types of diodes: (i) the graphene/n-Si diode is turning on at a positive voltage, while the graphene/p-Si diode is turning on at a negative voltage, due to the different types of carriers in the substrate, and (ii) the photocurrents are more pronounced (3–4 times higher) in the graphene/p-Si diode than in the graphene/n-Si diode at the same laser illumination power of 30 mW and at 532 nm wavelength, due to a larger space charge region.